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GaN Power Devices Fabricated on GaN Substrates
时间:2019-06-10 17:08    点击:   所属单位:微电子学院
讲座名称 GaN Power Devices Fabricated on GaN Substrates
讲座时间 2019-06-14 14:30:00
讲座地点 西电北校区阶梯教室J-112
讲座人 Masaaki Kuzuhara
讲座人介绍
Masaaki Kuzuhara  received the B.E., M.E. and Ph.D. degrees in electrical engineering from Kyoto University, Kyoto, Japan, in 1979, 1981 and 1991, respectively.
In 1981, he joined Central Research Laboratories, NEC Corporation, Kawasaki, Japan. From 1981 to 1997, he engaged in developing III-V heterojunction FETs and their microwave ICs. From 1998-2003, he worked for developing GaN-based heterojunction FETs for power applications as a senior manager. In 2004, he joined Graduate School of Engineering, University of Fukui, Fukui, Japan, as a professor. His current research interests include III-nitride heterostructure devices for high-voltage and high-frequency applications.
He was awarded 2002 Ichimura Prize from the New Technology Development Foundation for his contribution of developing 3V GaAs-HEMT for cellular handset. He also received 2016 Fukui-Prefecture Science Award for the development of high-voltage GaN power transistor. He is a Fellow of IEEE.
讲座内容
Recently, a free-standing GaN substrate has emerged as a substrate material for fabricating various GaN-based power devices. Major advantage of using a free-standing GaN substrate is its low dislocation density, which must be essential to suppress defect-related leakage currents under reverse-biased high-field conditions. In this seminar, we discuss fundamental device characteristics of GaN-based HEMTs fabricated on a free-standing semi-insulating GaN substrate with different Fe doping concentrations. It was found that deep isolation mesa-etching resulted in higher effective breakdown fields in GaN-based HEMTs. The results demonstrated the importance of ensuring enough high resistivity both in substrate and in buffer layers in the design of horizontal HEMT structures. Some of the preliminary results on GaN-based vertical MOSFETs will be also presented.
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