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IEEE固态和集成电路技术国际会议
【会议基本信息】 | |
会议名称(中文) | IEEE固态和集成电路技术国际会议 |
会议名称(英文) | IEEE International Conference on Solid-State |
所属学科 | 集成电路 |
会议类型 | 国际会议 |
会议论文集是否检索 | |
开始日期 | 2012-11-29 |
结束日期 | 2012-12-01 |
所在国家 | China |
所在城市 | Xi'an |
具体地点 | |
主办单位 | IEEE Beijing Section |
协办单位 | IET |
会议议题 | |
【组织结构】 | |
会议主席 | T. P. Ma |
组织委员会主席 | |
程序委员会主席 | |
会议嘉宾 | |
【重要日期】 | |
摘要截稿日期 | 2012-07-15 |
论文录用通知日期 | 2012-08-15 |
【会务组联系方式】 | |
联系人 | Dr. Yu-Long Jiang |
联系电话 | 86-21-65643768 |
icsict@fudan.edu.cn | |
通讯地址 | Department of Microelectronics Fudan University |
邮政编码 | |
会议注册费 | |
会议网站 | http://www.icsict.com |
会议背景介绍 |
The IEEE ICSICT-2012 conference is the 11th in the series aiming to provide an international forum for the presentation and discussion of recent advances in solid-state and integrated circuit technology. The conference will be held on Oct.29-Nov.1, 2012 in Xi’an, China. All aspects of solid-state devices, circuits, processing technologies, materials and other related research are within the scope of the conference. The three days of contributed and invited presentations on the latest developments in diverse fields given in oral and poster sessions, panel discussions on leading edge technology issues, and other activities will provide extensive opportunities for technical information exchange as well as a stimulating environment for mutual communication among participants. An exhibition of equipment and materials for solid state and integrated circuit technologies will be held concurrently with the conference. In addition, there will be discussions devoted to opportunities for cooperation and joint ventures in the microelectronics business in China. Excellent Student Paper Award will be presented at the closing of the conference.
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征文范围及要求 | The Scope and Topics of the Conference (Papers are solicited in, but not limited to the following areas) Process & Device Technologies 1. Channel Engineering 2. High-k/Metal gate Technology 3. Advanced Source/Drain Technology 4. Interconnect Technology 5. Advanced 3D Integration 6. Novel Process Technologies 7. Ultra-Thin Body Transistors and Device Variability 8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs 11. CNT, MTJ Devices and Nanowire Photodiodes 12. Low- Power and Steep Slope Switching Devices 13. Graphene Devices 14. Advanced Technologies for Ge MOSFETs 15. Organic semiconductor devices and technologies 16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability 19. Flash Memory 20. IT Magnetic RAM 21. Resistive RAMs 22. Phase Change Memory 23. 3-Dimensional Memory 24. MEMS Technology 25. Thin Film Transistors 26. Biosensors 27. PV and Energy Harvesting 28. Front End of Line (FEOL) Reliability 29. Memory Reliability 30. Back-End of Line and ESD Reliability 31. High-Frequency and Multi-Gate Device & Modeling 32. Advanced Device Performance and Variation Modeling 33. Simulation of Memory Devices 34. Simulation of Non-Silicon Materials and Devices Circuits & ICCAD 35. Processors 36. Analog Circuits 37. SOC 38. PLL and CDR 39. Low-Power Nyquist ADCs 40. Digital Circuits Resilient 41. High-Resolution and High Speed Data Converters 42. Digital Chip-to-Chip and On-Die Interfaces 43. Advanced Clock Generation 44. Clocking Building Blocks 45. High Speed On-Die Network Processor Clocking 46. Advanced SRAM & DRAM Circuits, Embbeded Memorres 47. Nonvolatile Memories Circuits 48. Advanced Transceivers Techniques 49. RF and New Wireless Transceivers 50. RF Circuits and Systems 51. Interference Robust RF Receivers 52. Signal Processing for Wireless 53. System-Level Modeling & Simulation/Verification 54. System-Level Synthesis & Optimization 55. High-Level/Behavioral/Logic Synthesis & Optimization 56. Physical Design 57. DFM Paper Submission Prospective authors are requested to submit 3 pages camera-ready full length paper in English for proceedings publication. The proceedings will have an IEEE catalogue number and will be collected in IEEE publication database ---- IEEE X’ploreÒ. Deadline for Camera-Ready Full-Length Paper Submission: July 15, 2012 Notification of Acceptance: August. 15, 2012 On-line submission at web-site http://www.icsict.com is required. |
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如果您有学术信息或学术动态,欢迎投稿。我们将在第一时间确认并收录,投稿邮箱: meeting@xidian.edu.cn
如果您有学术信息或学术动态,欢迎投稿。我们将在第一时间确认并收录,投稿邮箱: meeting@xidian.edu.cn